| PART |
Description |
Maker |
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| UPG2030TK UPG2030TK-E2-A |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING 邻舍1瓦超小型单刀双掷开
NECs 1 W ULTRA SMALL SPDT SWITCH
|
NEC, Corp.
NEC[NEC]
|
| UPG2151T5K-E2-A UPG2151T5K |
NECs COMPACT 1/2WL, S-BAND SPDT SWITCH
|
CEL[California Eastern Labs]
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC Corp.
|
| PS7801C-1A-F4 PS7801C-1A PS7801C-1A-F3 |
NECs 4-PIN ULTRA SMALL FLAT-LEAD SUPER LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET
|
CEL[California Eastern Labs]
|
| TGS4301-EPU |
SPDT VPIN
High Power Ka-Band Absorptive SPDT Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| NE552R479A-T1A-A NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
CEL[California Eastern Labs]
|
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
| NE3503M04 NE3503M04-A NE3503M04-T2-A |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
CEL
California Eastern Labs
|
| PS7801C-1A-F4 PS7801C-1A-F3 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
NECs 4-PIN ULTRA SMALL FLAT-LEAD SUPER LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET 邻舍4针超小型平引脚超低输出电1通道光学耦合场效应晶体管
|
California Eastern Laboratories, Inc.
|
